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| Партномер | Производитель | Количество | Поставка | Цена | Купить | |
|---|---|---|---|---|---|---|
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NE3210S01 РЧ транзисторы на арсениде галли... |
NEC |
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1215 | 2 нед. | По запросу |
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NE3210S01 SUPER LOW NOISE HJ FET |
California Eastern Labs |
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1890 | 2 нед. | По запросу |
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NE3210S01 HETERO JUNCTION FIELD EFFECT TRA... |
Renesas Technology Corp |
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1296 | 3 нед. | По запросу |
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NE3210S01-T1 РЧ транзисторы на арсениде галли... |
NEC |
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1822 | 3 нед. | По запросу |
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NE3210S01-T1 SUPER LOW NOISE HJ FET |
California Eastern Labs |
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1260 | 2 нед. | По запросу |
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NE3210S01-T1 HETERO JUNCTION FIELD EFFECT TRA... |
Renesas Technology Corp |
|
1728 | 3 нед. | По запросу |
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NE3210S01-T1B РЧ транзисторы на арсениде галли... |
NEC |
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1518 | 3 нед. | По запросу |
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NE3210S01-T1B SUPER LOW NOISE HJ FET |
California Eastern Labs |
|
1575 | 2 нед. | По запросу |
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NE3210S01-T1B HETERO JUNCTION FIELD EFFECT TRA... |
Renesas Technology Corp |
|
1080 | 2 нед. | По запросу |
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